An n(+)/p germanium (Ge) ultrashallow junction formed by PH3 plasma doping (PLAD) and KrF excimer laser annealing is demonstrated. In order to improve the n-type dopant activation without significant diffusion in the n(+)/p-Ge junction, we applied laser annealing on the PLAD samples. Compared with rapid thermal annealing (RTA), the laser annealing yielded shallower junction depth (similar to 15 nm) with low sheet resistance and comparable leakage current characteristics in the Ge n(+)/p junction. Therefore, PLAD with laser annealing can be considered as an alternative method for fabricating future Ge metal-oxide-semiconductor field-effect-transistors. (c) 2006 The Electrochemical Society.