A process was developed for low-temperature thermal chemical vapor deposition (CVD) of silicon dioxide (SiO2) in a single-wafer chamber utilizing disilane (Si2H6) and nitrous oxide (N2O) gaseous precursors. Deposition rate and refractive index (RI) were measured as a function of temperature, pressure, and gas flow rates. Additionally, film composition analysis and wet etch rates are provided. At 550 degrees C the deposition rate exceeds a 700 degrees C silane-based (SiH4) benchmark process. Deposition rates as high as 90 angstrom/min were measured at 470 degrees C. It is proposed that Si2H6 can be utilized in semiconductor manufacturing to achieve a lower thermal budget than existing SiH4-based processes. (c) 2006 The Electrochemical Society.