Multiferroic BiFeO3-based thin films were heteroepitaxially grown on LaNiO3/LaFeO3/MgO(001) substrates by radio frequency magnetron sputtering. The epitaxial BFO-based films were grown with pure perovskite phase and a cube-on-cube relationship at a low processing temperature of 450 degrees C. The partial substitution of La ions for Bi ions increased lattice parameters of the BFO film. With the La substitution, the significant improvement in dielectric, ferroelectric, and magnetic properties of the BFO films was observed. (c) 2006 The Electrochemical Society.