Ferroelectric (Pb1-xBax)ZrO3 (PBZ) thin films with different Pb/Ba ratio (Pb/Ba=75/25, 70/30, 65/35) were fabricated by a sol-gel process. Electrical properties of PBZ films on Pt/Ti/SiO2/Si substrates (metal/ferroelectric/metal structure) and on ZrO2/Si substrates metal/ferroelectric/insulator/semiconductor (MFIS) structure were investigated. The dielectric and ferroelectric properties depend greatly on the Pb/Ba ratio of the PBZ films. For the MFIS structure, the Pb/Ba=70/30 film shows the best memory property with memory window of 0.9 V when it was scanned at +/- 5 V. Experimental results demonstrate that ferroelectric PBZ films with ZrO2-buffered MFIS structure is suitable for non-volatile field effect transistor-type ferroelectric random access memory applications. (c) 2006 The Electrochemical Society.