Silicon carbide (SiC) is a wide bandgap semiconductor of interest in microelectromechanical systems. We demonstrate the growth of SiC nanoparticles using silicon dioxide (SiO2) films deposited from tetraethylorthosilicate [TEOS, Si(OC2H5)(4)]. High-temperature annealing allows residual carbon to diffuse to and react with the silicon substrate to form SiC nanoparticles (rather than a uniform SiC film). The growth of the SiC nanoparticles can be controlled by annealing conditions or eliminated by flowing oxygen during the film deposition. These particles are revealed by a standard wet etchant and provide an effective method to reduce adhesion between micromachined surfaces. (c) 2006 The Electrochemical Society.