We have investigated the Ni/Ag/indium tin oxide (ITO) contacts to n-SiC films for silicon-nanocrystal (nc-Si) light-emitting diodes (LEDs). The electrical properties of the nc-Si LED with a thin Ni/Ag interlayer was improved compared to that of the nc-Si LED without one. This was attributed to a decrease in the contact resistance due to the interfacial reaction at the contact region, which was confirmed by Auger depth profiles and high-resolution transmission electron microscope analyses. In addition, the light output power at a current of 20 mA was also enhanced by around 35%. This result strongly indicates that the Ni/Ag/ITO contact can serve as a highly promising contact scheme to enhance the efficiency of the nc-Si LEDs. (c) 2006 The Electrochemical Society.