In this article, electrochemical impedance spectroscopy is used to characterize the mechanism of galvanic corrosion between copper (Cu) seeds and tantalum nitride (TaNx) barriers deposited with different N-2 flow rates. By way of software simulating with EIS data, an equivalent circuit is built up to explain the corrosion behavior of the TaNx films' relation to the Cu seeds in an acidic chemical-mechanical-polishing slurry. The equivalent circuit can respond to changes in resistance and capacitance elements of the Cu-TaNx electrochemical system. It is found that the charge-transfer resistance of the TaNx galvanic corrosion increases with the N-2 flow rate, whereas the resistance of a tantalum-oxide layer is opposite because increasing the N content of the TaNx films inhibits corrosion and oxidation of the Ta metals. The result is consistent with our previous investigation that the galvanic corrosion of the TaNx films to the Cu seeds is retarded by the N element [C. C. Hung, Y. S. Wang, W. H. Lee, S. C. Chang, and Y. L. Wang, Electrochem. Solid- State Lett., 10, H127 (2007)]. (C) 2007 The Electrochemical Society.