We fabricated a high-performance polycrystalline silicon (poly-Si) thin film transistor (TFT) by new excimer laser annealing (ELA) method employing floating active structure. The new simple FLA method produces large lateral grains exceeding 4 Pin. A novel poly-Si TFT that exhibits very high mobility (mu(FE) = 331 cm(2)/V s) and low leakage current has been successfully fabricated by single laser irradiation on selectively floating a-Si layer. Uniform lateral grains have been obtained with wide ELA process window. (C) 2002 Elsevier Science B.V. All rights reserved.