CdSexTe1-x is a promising ternary material which has received considerable attention due to its applications in the fabrication of large area economic solar cell, semiconductor-metal Schottky barrier cell, etc. This material possesses various advantages, principally the high absorption coefficient, optimum band gap and chemical stability, which make it attractive for this kind of devices. CdSexTe1-x films with variable concentration (x = 0 to 1) have been deposited onto ultra clean glass substrates by screen printing and then sintered. The optical, electrical and structural properties of CdSexTe1-x alloys have been studied, which were found applicable in photovoltaics. The optical band gap of these films were determined by reflectance measurements in the wavelength range of 700-880 nm. The modification of band gap of intermixed CdSexTe1-x system has been described and was found suitable for efficient absorption in the visible region of the spectrum. Schottky barrier height and ideality factor for Al/CdTe and Al/CdSe junctions were determined by current-voltage characteristics. X-ray diffraction patterns of these films were reported. The films were of polycrystalline texture over the whole range studied and exhibit predominant cubic zinc blende structure. Sintering is very simple and viable compared to other costly methods. It is a technique less time-consuming, of maximum material utility and less pollutant and offers a suitable method for preparing films on large area substrates. (C) 2003 Elsevier B.V. All rights reserved.