Using a RF magnetron sputtering, amorphous carbon (a-C) and N-doped a-C (a-C:N) thin films were fabricated as field electron emitter. These thin films were deposited on Si(001) substrate at several temperatures. The field emission property was improved for a-C thin films grown at higher substrate temperatures. Furthermore, a-C:N film exhibits field emission property better than that of undoped a-C film. These results are explained in terms of the change in surface morphology and structural properties of a-C film. (c) 2004 Elsevier B.V. All rights reserved.