화학공학소재연구정보센터
Solid-State Electronics, Vol.44, No.1, 11-16, 2000
Mesh related problems in device simulation: Treatments of meshing noise and leakage current
Technology CAD (TCAD) becomes more important, because of an increase in a complexity of VLSI design. However, TCAD still requires further improvements from the practical point of view. This paper describes new mesh related problems in a device simulation; a meshing noise and a leakage current problems.