Recent progress in Silicon Carbide (SIC) material has made it feasible to build power devices with reasonable current density. This paper will present recent results including a comparison with state of the art silicon diodes. The effect of diode reverse recovery on the turn-on losses bf a fast Si IGBT are studied both at room temperature and at 150 degrees C. At room temperature, SiC diodes allow a reduction of IGBT turn on losses by as much as 6x and at 150 degrees C junction temperature SiC diodes allow a turn-on loss reduction of between 16x and 3x when compared to fast and ultra fast silicon diodes respectively. Total losses due to reverse diode recovery were reduced by as much as 10x at 25 degrees C and between 5x and 18x at 150 degrees C. The yield and I-V characteristics of these diodes are also described.