A new wide voltage operation regime double heterojunction bipolar transistor has been fabricated successfully and studied. A very small offset voltage of 50 mV, a small saturation voltage of 1 V, a large breakdown voltage higher than 20 V and current gain of 60 are obtained. In addition, the studied device exhibits a very wide output voltage operation swing in its transistor action. Therefore, the studied device shows promise for high-speed, high power and large input signal circuit applications.