Solid-State Electronics, Vol.44, No.4, 649-654, 2000
High temperature characteristics of GaN-based Heterojunction Bipolar Transistors and Bipolar Junction Transistors
GaN Bipolar Junction Transistors and GaN/A1GaN Heterojunction Bipolar Transistors were characterized at temperatures up to 250-300 degrees C and power densities > 10 kW cm(-2). The breakdown voltage in both types of devices decreased at higher temperatures, with less degradation in the BJTs. At low current levels, the offset voltages were 2-3 V but increased at higher currents.