Solid-State Electronics, Vol.44, No.9, 1549-1555, 2000
Unusual behavior of the electrical properties of GaN p-i-n rectifiers caused by the presence of deep centers and by migration of shallow donors
Instabilities encountered during thermal cycling of GaN p-i-n rectifiers hale been traced to filling of deep traps in the depletion region and to field-induced migration of shallow donors. Since the rectifiers are intended for high temperature operation (greater than or equal to 300 degrees C), the traps are not expected to impact device performance.