A DC current stress method has been developed to improve the voltage coefficient of resistance (VCR) of a poly silicon resistor (poly-R). The DC current stress method had been successfully applied to high voltage CMOS technology and is shown to be effective in reducing the VCR of a poly-R, Applying adequate DC current stress on poly-R, the VCR of the poly-R decreases by 37% on average. In addition, the mechanism of improvement and the criteria in choosing the adequate DC stressing current are also discussed and developed.