A self-aligned Ti-silicide interpoly contact for submicron bottom-gate TFT-SRAM with poly-channel oxidation is presented. In this new scheme, oxidation of poly-channel improves subthreshold swing and leakage current of TFTs, but degrades cell stability because of voltage drop across interpoly contact. Using a-Si/Ti bilayer process on backside oxide of poly-channel after channel oxidation and interpoly contact definition, self-aligned Ti-silicide interpoly contact can be formed and voltage drop across the interpoly contact can be greatly reduced. As a result, low subthreshold swing and high on/off ratio for unhydrogenated TFT in series with interpoly contact has been realized.