The aim of this paper is to demonstrate. for the first time. the viability of the monolithic integration of low voltage components, such as n and p channel MOSFETs. onto a planar vertical MOS controlled power device. This approach paves the way for realising a monolithic intelligent power chip with enhanced performance and reliability with respect to on-chip temperature. over-current and over-voltage protection circuitry. The detailed simulation results indicate no parasitic effects, both on the low voltage and power devices.