The InGaP/InGaAs single and double delta-doped pseudomorphic high electron mobility transistor (delta -PHEMT) grown by low-pressure metal organic chemical vapor deposition have been fabricated and investigated. Based on the employment of the wide-gap InGaP Schottky layer and delta-doped carrier supplier, the high breakdown voltages together with good device characteristics are obtained simultaneously. Furthermore, the newly designed V-shaped InGaAs channel can enhance the earlier confinement effect and increase the product of carrier concentration and mobility. Experimentally, for 1 x 100 mum(2) devices. the gate-to-drain breakdown voltages larger than 40 (30) V, the transconductances of 90 (201) mS/mm, and the maximum current densities of 646 (846) mA/mm are achieved for the studied single and double delta -PHEMT, respectively. Meanwhile, the measured f(T) and f(max) are 12 (16) and 28.4 (34) GHz, respectively.