Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si

Bera LK; Senapati B; Maikap S; Maiti CK

Solid-State Electronics, Vol.45, No.3, 379-383, 2001

DOI10.1016/S0038-1101(01)00065-X Export Citation

Determination of density and distribution of high-voltage stress-induced traps in O-2-, NO- and NO/O-2/NO-plasma grown oxides on strained Si

Bera LK, Senapati B, Maikap S, Maiti CK

High quality ultrathin (< 75 Angstrom) oxide and oxynitride films prepared by microwave O-2- and NO-plasma on strained Si (on fully relaxed SiGe buffer) have been investigated for the determination of trap charge density and distribution using high voltage pulse stressing measurements. The transient current and trap charge distribution in O-2-plasma treated films are compared with NO- and NO/O-2/NO-plasma grown dielectric films. It has been observed that the initial value of trap density for NO/O-2/NO-plasma grown dielectrics is lower than for NO- and O-2-plasma treated samples.