Solid-State Electronics, Vol.45, No.3, 423-426, 2001
Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy
The depth profile of high resolution photoelectron spectra at Ga2O3(Gd2O3)/GaAs and Ga2O3/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar+ sputtering. Only one intermediary Ga oxidation state at binding energy similar to 20.3 cV has been observed in the Ga2O3(Gd2O3)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga3+ oxidation state and leads to the excellent electrical insulating property of the Ga2O3(Gd2O3) film.