Effect of N-2 plasma treatments on dry etch damage in n- and p-type GaN

Kent DG; Lee KP; Zhang AP; Luo B; Overberg ME; Abernathy CR; Ren F; Mackenzie KD; Pearton SJ; Nakagawa Y

Solid-State Electronics, Vol.45, No.3, 467-470, 2001

DOI10.1016/S0038-1101(01)00016-8 Export Citation

Effect of N-2 plasma treatments on dry etch damage in n- and p-type GaN

Kent DG, Lee KP, Zhang AP, Luo B, Overberg ME, Abernathy CR, Ren F, Mackenzie KD, Pearton SJ, Nakagawa Y

The extent of damage recovery by N-2 plasma treatment of previously damaged n- and p-GaN has been examined using current-voltage (I-V) characteristics from Schottky diodes, There are two contributions to the observed improvement in the I-V characteristics, namely a simple annealing effect and also a chemical effect from reactive nitrogen. However the N-2 plasma treatment does not fully restore the initial electrical properties of the near-surface region.