Solid-State Electronics, Vol.45, No.7, 1149-1152, 2001
Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures
The effects of lambda -ray irradiation on GaAs MESFETs were studied. The lambda -ray irradiation was generated from a Co-60 source. DC characteristics of the MESFETs were used to monitor the effects of radiation, which included source-drain I-V characteristics, gate leakage current, saturation drain current, sub-threshold gate leakage current, and sheet resistance. These changes of device characteristics provided us a useful method to determine the radiation damage coefficient.