The property of contacts on semiconductors, which are deposited and annealed in high temperatures, is significantly affected by the annealing condition. SiC is one of the most attractive semiconductors applied in high temperature devices. In this study, the possibility of Pt being used as Schottky contact on SiC was examined by investigating the effects of annealing on the electrical properties of Pt/beta -SiC contact. The as-deposited Pt/n-type beta -SiC contacts showed ohmic property, which is attributed to the donor-like traps at the interface due to the sputtering damage. On the other hand, after annealing the contacts showed Schottky property, which seems to be originated from the annealing of traps and the movement of the junction into the defect-free SiC film during annealing. The barrier height increased with increasing annealing temperature, showing 1.37 eV at the annealing temperature of 900 degreesC.