Several processing parameters for Ti/Al ohmic contacts to n-GaN have been considered in this study. Ti/Al contacts are widely used as low resistance contacts in GaN-based electronic and photonic devices, but the processing issues of these contacts are not thoroughly understood to allow proper standardization. In this study, we have looked at the effects of different Ti:Al layer thickness ratios, oxidizing atmospheres, wet surface cleaning procedures, and deposition techniques on the Ti/Al contact structure's performance. A parallel processing study of Ti/Al contacts with more novel contacts is suggested as a means of controlling the many inherent variables that are shown to affect contact performance. We have used this parallel processing method to quantify the performance of a novel NiAl contact to nGaN.