화학공학소재연구정보센터
Solid-State Electronics, Vol.45, No.11, 1891-1897, 2001
Noise behavior in SiGe devices
This paper presents an overview of SiGe technologies and their corresponding noise properties both in the high frequency and low frequency range. We demonstrate that SiGe bipolar technology exhibits impressive low frequency noise performance with an excess corner noise frequency in the I kHz range. These results have been validated by low phase noise microwave oscillators based on SiGe material.