Wireless communication systems require radiofrequency integrated circuit implementation of high performance front-end receiver at a low cost. In this paper, suitability of silicon-germanium heterojunction bipolar transistors (SiGe-HBTs) is examined. DC characterization both at room and low temperature have been performed. A single-stage SiGe-HBT amplifier has been designed and fabricated on Duroid board. A linear gain of 13.2 dB at a center frequency of 1.5 GHz has been obtained.