An analytical modeling of surface recombination in ion-impalnted MOSFET device has been carried out considering a Guassian distribution impurity profile in the channel. The modeling is based on one-dimensional solution of the current density equation. The study indicates that surface recombination depends strongly on the diffusion coefficient of the carriers, as well as on the surface recombination velocity. A proper tailoring of the channel implant profile is necessary for minimizing the surface recombination.