Ultra-thin gate oxide reliability projections

Weir BE; Alam MA; Silverman PJ; Baumann F; Monroe D; Bude JD; Timp GL; Hamad A; Ma Y; Brown MM; Hwang D; Sorsch TW; Ghetti A; Wilk GD

Solid-State Electronics, Vol.46, No.3, 321-328, 2002

DOI10.1016/S0038-1101(01)00103-4 Export Citation

Ultra-thin gate oxide reliability projections

Weir BE, Alam MA, Silverman PJ, Baumann F, Monroe D, Bude JD, Timp GL, Hamad A, Ma Y, Brown MM, Hwang D, Sorsch TW, Ghetti A, Wilk GD

We describe the reliability projection methods currently used and show that 1.6 nm oxides are sufficiently reliable even if soft breakdown is considered the point of failure. We also explore the possibility of using oxides after soft breakdown. (C) 2002 Elsevier Science Ltd. All rights reserved.

Keywords:gate oxide;reliability;TDDB;ultra-thin