Designs of 0.10 mum buried p-channel devices have been studied and compared. We demonstrate that silicon p-MOSFETs with n-type polysilicon gate could achieve a good control of short channel effects. Based on new channel design optimisation using through the gate boron implantation and a tilted arsenic pocket, it is shown that buried channels can be scaled down to 0.10 mum geometries with a satisfactory I-on/I-off ratio for 1.5 V operation: a high drive current of 220 muA/mum at 1 nA/mum I-off was achieved by scaling down the extrinsic source/drain resistance. (C) 2002 Elsevier Science Ltd. All rights reserved.