A novel analytical model for calculating, self-consistently, the static and low frequency noise characteristics LFN of Si1-mGem pMOSFETs is proposed. The model is shown to account satisfactorily for the transconductance and LFN data taken on MOSFETs originating from various sources. We have used the model for predicting the LFN behavior of generic devices having an arbitrary Ge content and thickness value of the active layers, in order to demonstrate its capacity for optimizing the noise characteristics of devices. (C) 2002 Elsevier Science Ltd. All rights reserved.