A simple method is presented to de-embed the edge-leakage Current ill shallow trench isolation submicron MOSFETs from the measured terminal current. The extremely nonlinear and length/bias-dependent "subthreshold hump" has been modeled by a one-piece compact model using a two-step extraction procedure, which demonstrated excellent prediction to the measurement data. The result also suggests that the edge leakage exhibits a similar current-voltage characteristics as the main MOSFET on the same deafer which, if not modeled as a separate parasitic transistor, would lead to wrong information on the main transistor's subthreshold slope. (C) 2002 Elsevier Science Ltd. All rights reserved.