The InP/InGaAs and InGaP/GaAs superlattice emitter resonant tunneling bipolar transistors (SE-RTBTs) have been fabricated and demonstrated. By the employment of five-period superlattice in the emitter layer, the RT effect in saturation regime is observed at 77 K for InP/InGaAs SE-RTBT, In addition, due to the larger valence band discontinuity DeltaE(V) at InGaP/GaAs heterojunction. the RT effect is observed both in saturation and forward active regimes at 300 K for InGaP/GaAs SE-RTBT. The confinement effect for minority carriers is enhanced due to the insertion of superlattice. The common emitter current gains up to 170 and 220 are observed for InP/InGaAs and InGaP/GaAs SERTBTs, respectively. Lower offset voltages of about 125 mV are observed in the studied devices. (C) 2002 Elsevier Science Ltd. All rights reserved.