Solid-State Electronics, Vol.46, No.9, 1463-1466, 2002
Determination of deep trap concentration at channel-substrate interface in GaAs MESFET using sidegating measurements
An analytical expression that describes the sidegating effect in a GaAs MESFET, (i.e. relates the drain current to the substrate voltage) is obtained. Based on this expression, a simple method for determining the concentration of vacant deep traps at the channel-substrate interface from sidegating measurements is proposed and applied for device characterization and parameter extraction. (C) 2002 Elsevier Science Ltd. All rights reserved.