In this paper, a new device structure is proposed to suppress parasitic latch-up effectively and also improve the turn-off characteristic by cascading the drain of lateral double diffused MOSFET (LDMOS) to the cathode of lateral insulated gate bipolar transistor (LIGBT). The forward biased safe operating area of proposed device is large because the parasitic thyristor latch-up is eliminated even in high voltage exceeding 200 V by current saturation of LDMOS. Also switching speed is improved considerably compared with conventional LIGBT. The device characteristics is verified by two-dimensional simulation (MEDICI). (C) 2002 Elsevier Science Ltd. All rights reserved.