A Monte Carlo simulator has been used to study the electron mobility in different silicon-on-insulator structures at room and lower temperatures. Electron mobility behaviour in single-gate SOI MOSFETs is compared to that in double gate devices. The role of volume inversion is analysed. In addition, the electron mobility in strained silicon-on-SiGe-on-insulator inversion layer is also studied. (C) 2002 Elsevier Science Ltd. All rights reserved.