Solid-State Electronics, Vol.47, No.1, 39-44, 2003
Proton response of low-frequency noise in 0.20 mu m 90 GHz f(T) UHV/CVD SiGeHBTs
The influence of proton exposure on the low-frequency noise of 0.20 mum UHV/CVD SiGe HBTs is presented. The noise degradation after irradiation shows a strong dependence on transistor geometry. Our previously developed noise theory is used to understand this behavior, and a comparison is made between these new results on third generation SiGe technology and our prior results on the first generation SiGe technology. (C) 2002 Elsevier Science Ltd. All rights reserved.