We present experimental evidence of an optical memory effect in crystalline silicon doped with Er3+ ions. It is observed at low temperature using two-color experiments in the visible and the mid-infrared (with a free-electron laser). Based on the physical mechanism governing the effect, possibilities for improvement of thermal stability and increase of archival time are discussed. An all-optical all-silicon memory element for use in photonic circuits is proposed. Published by Elsevier Science Ltd.