This paper reviews the results of a comprehensive donor, acceptor, and compensation ion-implantation work in alpha-SiC by the author's group in the past 10 years. Ion-implantation of N, P, As, and Sb donors; B, Al, and Ga acceptors; and V, Si, and C compensators are performed into SiC epitaxial layers and bulk semi-insulating substrates. Empirical range statistics formulas that are valid in the keV-MeV energy range are developed for donor and acceptor ion-implantations. Implanted material is annealed at different temperatures up to 1700 degreesC with different protective cap conditions. Results of atomic force microscopy, Rutherford back-scattering, secondary ion mass spectrometry depth profile, van der Pauw Hall, and capacitance-voltage measurements intended to evaluate the surface morphology, lattice perfection, implant thermal stability, and implant electrical activation in the as-implanted and annealed material are presented and discussed. Results on demonstrative devices made by ion-implantation in SiC are also presented. (C) 2002 Elsevier Science Ltd. All rights reserved.