100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFETs have reached new record cut-off frequency f(T) of 74 GHz (105 GHz), with maximum oscillation frequency f(max) of 107 GHz (170 GHz) at temperatures 300 K (50 K). Moreover they show a low noise figure NFmin of 0.4 dB and noise resistance R-n of 52 Omega at 2.5 GHz and 300 K. The dependence of electric parameters and RF performances of the device on biases and temperature is presented. Experimental results are compared with physical simulations at short gate lengths to analyze carrier transport and further device optimization. (C) 2002 Published by Elsevier Science Ltd.