Polycrystalline silicon is often implanted with boron or BF2+ to fabricate p-type resistors in integrated circuits. This paper demonstrates the differences between boron and BF2+ doped polysilicon resistors experimentally and describes the influence of fluorine on boron redistribution near the interface of polysilicon and its underlying layer. Results show the resistance of BF2+ implanted layers to be much less than boron implanted layers at low dose levels irrespective of the underlying layer on which polysilicon is deposited. As the dose level increases, the difference between sheet resistances reduce and after a transition dose level, BF2+ implanted resistors start showing a higher resistance than boron doped samples. This transition level for poly-on-Si3N4 samples occurs at a lower dose level than poly-on-SiO2 samples. Also the change in resistance, DeltaR is always much higher in poly-on-Si3N4 than poly-on-SiO2 samples for any given dose level. At high doping levels BF2+ and boron layers are comparable when the polysilicon layer is deposited on SiO2 surface. SIMS analysis shows a peak in the fluorine concentration near the interface of polysilicon and SiO2 as well as polysilicon and Si3N4 in BF2+ implant, which enhances the accumulation of boron near the interface significantly. The change in grain structure of polysilicon on Si3N4 surface coupled with enhancement of boron accumulation near the interface in presence of fluorine doubles the sheet resistance of BF2+ doped polysilicon on Si3N4 surface. The temperature coefficient of the resistors for a given sheet resistance is independent of the underlying layer and implanted species. Amorphous silicon resistors fabricated with boron and BF2+ show a trend very similar to polysilicon. (C) 2002 Published by Elsevier Science Ltd.