Electrical properties of Schottky contact of titanium on low boron doped SiGeC have been investigated as a function of annealing temperature. Annealing has been performed at a temperature range of 400-600 degreesC for 10 min. The Schottky barrier heights were deduced from current-voltage characteristics. Both rapid thermal annealing and bias voltage will lead to a decrease of the Schottky barrier height for Ti/p-SiGeC contact. The decrease of Schottky barrier heights caused by the increase of annealing temperatures is about 3.5-5.6 meV per 100 degreesC between 400 and 600 degreesC and by the increase of bias voltage is less than 1 meV/V. X-ray diffraction and secondary ion mass spectroscopy measurements were performed and showed that, after annealing at 600 degreesC for 10 min, the SiGeC peak has shifted a little to the right compared with the Si substrate peak and a slight strain relaxation was Occurred in the SiGeC epilayer. (C) 2003 Published by Elsevier Science Ltd.