Solid-State Electronics, Vol.47, No.5, 893-897, 2003
Minority carrier lifetime and diffusion length in Si1-x-yGexCy heterolayers
The minority carrier lifetime and diffusion length have been measured in partially strain-compensated Si0.795Ge0.2C0.005 layers grown using ultrahigh vacuum chemical vapor deposition. A minority carrier lifetime greater than 1 mus has been observed. The data indicate that the minority carrier lifetimes are degraded due to carbon incorporation. (C) 2003 Elsevier Science Ltd. All rights reserved.