Nd:YAG continuous wave (CW) laser (lambda = 1.06 mum) was used to irradiate Zn film deposited by evaporation deposition on the n-type InP substrates. The PN junction was obtained. The depth of the junctions and the doping distribution dependence upon the irradiation time and the irradiation power density were investigated. The relation between the depths of the junctions and the thickness of Zn deposition is linear. The hole concentration of uniform distribution, shallow junction, and heavy doping concentration are attained (10(19)-10(20) cm(-3)). The primary mechanism of Zn doping is considered that alloy junctions form after irradiated. (C) 2002 Elsevier Science Ltd. All rights reserved.