In this paper, a new InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been successfully fabricated and demonstrated. The employing of a thin n-InGaAs emitter between InP/InGaAs superlattice and p(+)-InGaAs base helps to lower potential spike and reduce neutral-emitter recombination current, simultaneously. Furthermore, InP/InGaAs superlattice resulted from tunneling injection can reduce the spread of thermal distribution and non-radiative recombination cross-section. Experimentally, the studied device exhibits a common-emitter current gain as high as 670 and low collector-emitter offset voltage of 60 mV at room temperature. To our knowledge, the device exhibits the largest current gain when compared to the previously reported SE-RTBTs. (C) 2003 Elsevier Science Ltd. All rights reserved.