Statistical modeling for 0.1 mum NMOSFET has been performed for important device parameters through design of experiment with respect to implant dose parameters. The model has been validated through a comparison between rigorous Monte Carlo (MC) process simulation and MC calculations from these models. Mean and variances of device characteristics such as drive current (I-on), leakage current (I-off), subthreshold slope (SS) and threshold voltage (V-t) have been determined from the MC data from both the process simulation and the model equations. Also transmission of moments technique is applied on these models to verify the quantities that have been determined rigorously by MC technique. (C) 2003 Elsevier Science Ltd. All rights reserved.