The reverse breakdown voltage (V-B) of p-i-n rectifiers fabricated on 4H-SiC was measured as a function of device active area, mesa length and metal overlap distance for diodes with SiO2 passivated mesa edge termination. V-B was inversely dependent on device area for the range 0.01-0.36 mm(2), decreasing from similar to-1030 to similar to-730 V. The breakdown voltage was not dependent on mesa length and was maximized at similar to5 mum metal overlap distance. The on/off ratio was similar to10(4) at 3.5/-1000 V, with the power figure-of-merit V-B(2)/R-ON reaching values as high as 84.5 MW cm(-2). (C) 2003 Elsevier Science Ltd. All rights reserved.