We have designed and fabricated a high-reflectivity AlAs/GaAs distributed Bragg reflector (DBR) at 1.3 mum. By transplanting the InP/InGaAs/InP heterojunction epitaxial film to an AlAs/GaAs DBR, which is grown oil the GaAs substrate, the epitaxial lift-off (ELO) photodiode exhibits a low dark current of 4.4 nA at a reverse bias of 0.5 V. This demonstrates the feasibility to fabricate a good performance of InGaAs/DBR resonant-cavity-enhanced photodetectors by ELO technique. (C) 2003 Elsevier Ltd. All rights reserved.