화학공학소재연구정보센터
Solid-State Electronics, Vol.47, No.10, 1855-1858, 2003
Depletion-mode n-channel organic field-effect transistors based on NTCDA
The depletion-mode n-channel organic field-effect transistors (OFETs) based on naphthalene-tetracarboxylic-dianhydride (NTCDA) were fabricated and characterized. Electrical characteristics of the OFETs were demonstrated and analyzed under the depletion-mode operation. The mobility of NTCDA is about 0.016 cm(2) V-1 s(-1). The threshold voltage is -32 V, and cut off current is 1.76 nA. The on/off ratio extracted from transfer characteristics at saturation region (V-ds = 60 V) is 2.25 x 10(2). (C) 2003 Elsevier Ltd. All rights reserved.