A simple and explicit analytical current model is presented for the dual-gate MOSFET device. The model is based on an appropriate function assignment to the gate potential along the channel. The current equation is integrated as a series approximation along the channel, for a general gate potential function. A continuous and differentiable gate potential function is proposed for the device, to be used with the approximate integral. The lateral field effect on mobility is also included in the analysis, which is especially important for the device behavior. The necessary parameters related to the DC characterization of the device are derived. The theoretical results are compared with the PISCES-IIB device simulator results. (C) 2003 Elsevier Ltd. All rights reserved.